Beilstein J. Nanotechnol.2016,7, 1492–1500, doi:10.3762/bjnano.7.142
devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics.
Keywords: germaniumnanoparticle; photocurrent; photodetectors; response time; transport mechanism
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Figure 1:
X-ray diffractograms of Ge:SiO2 thin films deposited at 300, 400 and 500 °C.